MT41K512M8DA-107 XIT:P 数据手册
4Gb: x4, x8, x16 DDR3L SDRAM Addendum
Description
DDR3L SDRAM Data Sheet Addendum
MT41K1G4 – 128 Meg x 4 x 8 banks
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
•
•
•
•
•
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM
(Die Rev.: E) data sheet specifications when running in
1.5V compatible mode.
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options
Features
Marking
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 10.5mm) Rev. P
• FBGA package (Pb-free) – x16
– 96-ball (8mm x 14mm) Rev. P
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
• Special Options
– Premium Lifecycle Product (PLP)
• Operating temperature
– Commercial (0°C ≤ T C ≤ +95°C)
– Industrial (–40°C ≤ T C ≤ +95°C)
• Revision
• VDD = V DDQ = 1.35V (1.283–1.45V)
• Backward compatible to V DD = V DDQ = 1.5V ±0.075V
– Supports DDR3L devices to be backward compatible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 0°C to +95°C
– 64ms, 8192-cycle refresh at 0°C to +85°C
– 32ms at +85°C to +95°C
1G4
512M8
256M16
DA
TW
-093
-107
-125
X
None
IT
P
Table 1: Key Timing Parameters
Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
-093 1, 2
2133
14-14-14
13.09
13.09
13.09
-107 1
1866
13-13-13
13.91
13.91
13.91
-125
1600
11-11-11
13.75
13.75
13.75
Notes:
tRCD
(ns)
tRP
(ns)
CL (ns)
1. Backward compatible to 1600, CL = 11 (-125).
2. Backward compatible to 1866, CL = 13 (-107).
PDF: X26P4QTWDSPK-13-10329
4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
4Gb: x4, x8, x16 DDR3L SDRAM Addendum
Description
Table 2: Addressing
Parameter
1 Gig x 4
512 Meg x 8
256 Meg x 16
Configuration
128 Meg x 4 x 8 banks
64 Meg x 8 x 8 banks
32 Meg x 16 x 8 banks
Refresh count
8K
8K
8K
64K (A[15:0])
64K (A[15:0])
32K (A[14:0])
Row address
Bank address
Column address
8 (BA[2:0])
8 (BA[2:0])
8 (BA[2:0])
2K (A[11, 9:0])
1K (A[9:0])
1K (A[9:0])
1KB
1KB
2KB
Page size
Figure 1: DDR3L Part Numbers
Example Part Number: MT41K256M16TW-107 XIT:P
Configuration
Package
Speed
Revision
{
MT41K
:
Configuration
:P
Mark
Revision
1 Gig x 4
1G4
512 Meg x 8
512M8
Temperature
Mark
256 Meg x 16
256M16
Commercial
None
Industrial temperature
Package
Note:
Rev.
IT
Mark
78-ball 8mm x 10.5mm FBGA
P
DA
96-ball 8mm x 14mm FBGA
P
TW
Mark Special Options
X
Premium Lifecycle Product (PLP)
Mark
Speed Grade
-093
tCK
= .938ns, CL = 14
-107
tCK
= 1.07ns, CL = 13
-125
tCK
= 1.25ns, CL = 11
1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
PDF: X26P4QTWDSPK-13-10329
4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8, x16 DDR3L SDRAM Addendum
Revision History
Revision History
Rev. A – 02/16
• Initial release based on the 4Gb x4, x8, x16 DDR3L SDRAM, Rev. N 12/15 data sheet
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: X26P4QTWDSPK-13-10329
4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
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