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MT41K512M8DA-107 XIT:P

MT41K512M8DA-107 XIT:P

  • 厂商:

    MICRON(镁光)

  • 封装:

    TFBGA-78

  • 描述:

    IC DRAM 4GBIT PARALLEL 78FBGA

  • 数据手册
  • 价格&库存
MT41K512M8DA-107 XIT:P 数据手册
4Gb: x4, x8, x16 DDR3L SDRAM Addendum Description DDR3L SDRAM Data Sheet Addendum MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description • • • • • DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev.: E) data sheet specifications when running in 1.5V compatible mode. Self refresh temperature (SRT) Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Options Features Marking • Configuration – 1 Gig x 4 – 512 Meg x 8 – 256 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball (8mm x 10.5mm) Rev. P • FBGA package (Pb-free) – x16 – 96-ball (8mm x 14mm) Rev. P • Timing – cycle time – 938ps @ CL = 14 (DDR3-2133) – 1.07ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) • Special Options – Premium Lifecycle Product (PLP) • Operating temperature – Commercial (0°C ≤ T C ≤ +95°C) – Industrial (–40°C ≤ T C ≤ +95°C) • Revision • VDD = V DDQ = 1.35V (1.283–1.45V) • Backward compatible to V DD = V DDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C 1G4 512M8 256M16 DA TW -093 -107 -125 X None IT P Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -093 1, 2 2133 14-14-14 13.09 13.09 13.09 -107 1 1866 13-13-13 13.91 13.91 13.91 -125 1600 11-11-11 13.75 13.75 13.75 Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1600, CL = 11 (-125). 2. Backward compatible to 1866, CL = 13 (-107). PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Description Table 2: Addressing Parameter 1 Gig x 4 512 Meg x 8 256 Meg x 16 Configuration 128 Meg x 4 x 8 banks 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K 8K 64K (A[15:0]) 64K (A[15:0]) 32K (A[14:0]) Row address Bank address Column address 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) 1KB 1KB 2KB Page size Figure 1: DDR3L Part Numbers Example Part Number: MT41K256M16TW-107 XIT:P Configuration Package Speed Revision { MT41K : Configuration :P Mark Revision 1 Gig x 4 1G4 512 Meg x 8 512M8 Temperature Mark 256 Meg x 16 256M16 Commercial None Industrial temperature Package Note: Rev. IT Mark 78-ball 8mm x 10.5mm FBGA P DA 96-ball 8mm x 14mm FBGA P TW Mark Special Options X Premium Lifecycle Product (PLP) Mark Speed Grade -093 tCK = .938ns, CL = 14 -107 tCK = 1.07ns, CL = 13 -125 tCK = 1.25ns, CL = 11 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Addendum Revision History Revision History Rev. A – 02/16 • Initial release based on the 4Gb x4, x8, x16 DDR3L SDRAM, Rev. N 12/15 data sheet 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: X26P4QTWDSPK-13-10329 4gb_1_35v_ddr3l_xit_addendum.pdf - Rev. A 02/16 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2016 Micron Technology, Inc. All rights reserved.
MT41K512M8DA-107 XIT:P 价格&库存

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